Abstract
Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current-voltage curve, based on the metal-semiconductor-metal model, showed a high electron carrier concentration of 2.0 × 10 17 cm -3 and a high electron mobility of 446.42 cm 2 V -1 s -1 . Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm -1 and an estimative threshold field of 3.36 V μm -1 . © 2013 Kuo et al.; licensee Springer.