Abstract
This article relates generally to photoresist and more particularly to self-developing resists which produce a relief image when exposed to photon, ion or electron beams of appropriate energy. The self-developing material produces a relief image during exposure to a photon, electron or ion beam of a suitable energy. After exposure, a wafer coated with such a self-developing material can readily be examined with a microscope illuminated with light in a non-exposing spectrum. Using this approach, there is no longer any necessity for using wet chemicals on the mask aligner.