The growth of large-area epitaxial transition metal dichalgogenides (TMDCs) are of central importance for scalable integrated device applications. Different methods have been developed to achieve large-sized high quality films. However, reliable approaches for centimeter-sized or even wafer-level epitaxial growth ofTMDCs are still lacking. Here we demonstrate a new method to grow inch-sized epitaxial WSe2 films on SiO2/Si substrates at a much lower temperature with high repeatability and scalability. High quality crystalline films are achieved through direct selenization of a tungsten film with platinum as the underlayer. The self-assembled PtSe2 buffer layer, formed during selenization, assists epitaxial growth ofWSe(2). Using fabricated WSe2 films, excellent performance memory devices are demonstrated. As a member of the TMDC family, our findings based on WSe2 may also be applied to other TMDC materials for large-scale production of high quality TMDC films for various applications.
- Scalable Epitaxial Growth of WSe2 Thin Films on SiO2/Si via a Self-Assembled PtSe2 Buffer Layer
- Pei-Chen Wu - National Tsing Hua UniversityChun-Liang Yang - National Tsing Hua UniversityYuanmin Du - National Tsing Hua UniversityChih-Huang Lai - National Tsing Hua University, College of Semiconductor Research
- NATURE PORTFOLIO
- 10
- 104-2221-E-007-047-MY2 / Ministry of Science and Technology, Taiwan; National Science & Technology Council (NSTC) Taiwan
- Journal article
- 29/05/2019
- Scientific reports, Vol.9(May (E-published)), 8017
- English