Abstract
This study employs real-time high-temperature scanning tunneling microscopy to examine the evolution of the surface atomic structure of Si(100) during homoepitaxy by chemical vapor deposition at 625°C. At the initial stage, a (2 × n) structure is gradually formed, and the growth mode is pure step flow, followed by double step flow after a single-domain surface is obtained due to faster step advance of S B than S A . As growth proceeds, areas with c(4 × 4) symmetry appear, grow, and eventually cover the entire surface. © 1998 Elsevier Science B.V. All rights reserved.