Schottky barrier formation by silicon deposition on unreactive and reactive metal substrates

Y. Chang; J. Hanson; Y. Hwu; F. Zanini; G. Margaritondo

doi:10.1116/1.575872

Schottky barrier formation by silicon deposition on unreactive and reactive metal substrates

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Schottky barrier formation by silicon deposition on unreactive and reactive metal substrates

Y. Chang, J. Hanson, Y. Hwu, F. Zanini 和 G. Margaritondo

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 卷.7(3), 頁碼.717-719

1989

DOI: https://doi.org/10.1116/1.575872

摘要

Condensed Matter Physics

Surfaces and Interfaces

Surfaces

Coatings and Films

We compare the interface Fermi-ievel positions in the Si gap, obtained from photoemission studies of Si overlayers on Al(110) and Cu(111), and of Al overlayers on Si(111). Theses positions are similar to each other, and consistent with the predictions of a corrected midgap-energy approach. © 1989, American Vacuum Society. All rights reserved.

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題名: Schottky barrier formation by silicon deposition on unreactive and reactive metal substrates
翻譯題名: Schottky barrier formation by silicon deposition on unreactive and reactive metal substrates
創作者：: Y. Chang (作者) - University of Wisconsin–Madison
J. Hanson (作者) - University of Wisconsin–Madison
Y. Hwu (作者) - University of Wisconsin–Madison
F. Zanini (作者) - University of Wisconsin–Madison
G. Margaritondo (作者) - University of Wisconsin–Madison
學術資源類型: 期刊文章
出版日期: 1989
出版資訊: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 卷.7(3), 頁碼.717-719
語言: 英語

Schottky barrier formation by silicon deposition on unreactive and reactive metal substrates

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