Schottky barrier height and interfacial state density on oxide-GaAs interface

J.S. Hwang; C.C. Chang; M.F. Chen; C.C. Chen; K.I. Lin; F.C. Tang; M. Hong; J. Kwo

doi:10.1063/1.1578528

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Schottky barrier height and interfacial state density on oxide-GaAs interface

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Schottky barrier height and interfacial state density on oxide-GaAs interface

J.S. Hwang, C.C. Chang, M.F. Chen, C.C. Chen, K.I. Lin, F.C. Tang, M. Hong and J. Kwo

Journal of Applied Physics, Vol.94(1), pp.348-353

01/07/2003

DOI: https://doi.org/10.1063/1.1578528

Appears in keyword about Physics

Abstract

The interfacial characteristics of a series of oxide films on GaAs were investigated using photoreflectance (PR) and Raman spectra. The barrier heights across the interfaces and the densities of interfacial states were determined from the PR intensity as a function of the pump power density. Raman spectra were used to characterize the structural properties of the oxide films.

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Title: Schottky barrier height and interfacial state density on oxide-GaAs interface
Creators - without role: J.S. Hwang - National Cheng Kung University
C.C. Chang - National Cheng Kung University
M.F. Chen - National Cheng Kung University
C.C. Chen - National Cheng Kung University
K.I. Lin - National Cheng Kung University
F.C. Tang - National Cheng Kung University
M. Hong - Alcatel-Lucent (France)
J. Kwo - Alcatel-Lucent (France)
Identifiers: 9957772820706774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Journal article
Publication Details: Journal of Applied Physics, Vol.94(1), pp.348-353

Schottky barrier height and interfacial state density on oxide-GaAs interface

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