Abstract
A new Schottky barrier (SB) nonvolatile nanowire memory is reported experimentally with efficient low-voltage programming and erasing. By applying an SB source/drain to enhance the electrical field in the silicon gate-all-around nanowire, the nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory can operate at gate voltages of 5 to 7 V for programming and-7 to-9 V for erasing through Fowler-Nordheim tunneling. The larger the gate voltage is, the faster the programming/erasing speed and the wider the threshold-voltage shift are attained. Importantly, the SB nanowire SONOS cells exhibit superior 100-K cycling endurance and high-temperature retention without any damages from metallic silicidation process or field-enhanced tunneling. © 2006 IEEE.