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Selected-area growth of SnO2 nanowires on TiO2 layer through reduction of hydrogen gas
Journal article   Peer reviewed

Selected-area growth of SnO2 nanowires on TiO2 layer through reduction of hydrogen gas

Jyh-Ming Wu, Han C. Shih and Yung-Kuan Tseng
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol.46(4 A), pp.1792-1796
05/04/2007

Abstract

Cathodoluminescence Nanowires SnO2 TiO2
SnO 2 nanowires were grown on a TiO 2 /ATP (antimony doped tin dioxide) glass substrate by thermal evaporation at ∼750°C without any source material (tin oxide powder or metal tin). A SnO 2 layer was melted and evaporated from ATP glass substrate. Hydrogen served as a reductant, causing vapor species of SnO and O 2 to be formed from the SnO 2 layer. The patterned, TiO 2 layer provided sites with a high surface energy such that the selected-area growth of SnO 2 nanowires was achieved. A growth model, based on a vapor-liquid-solid mechanism, for interpreting the growth of the nanowires in our work is proposed. Field emission scanning electron microscopy (FESEM), high-resolution transmission emission microscopy (HRTEM), and cathodoluminescence (CL) were used to characterize the nanowires. ©2007 The Japan Society of Applied Physics.

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