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Selective A- or B-site single termination on surfaces of layered oxide SrLaAlO4
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Selective A- or B-site single termination on surfaces of layered oxide SrLaAlO4

A. Biswas, P.B. Rossen, J. Ravichandran, Y.-H. Chu, Y.-W. Lee, C.-H. Yang, R. RameshY.H. Jeong
Applied Physics Letters, 卷.102(5), 051603
02/2013

摘要

Physics and Astronomy (miscellaneous)
We demonstrate that thermal annealing in cation controlled environments is an effective means to obtain atomically flat and chemically single terminated surfaces of a layer structured substrate. The effectiveness of the cation controlled annealing method is proved with SrLaAlO 4 , which is a representative layer structured substrate of A 2 BO 4 type. Potassium ion scattering, in particular, shows that the method allows not only single termination but also selective termination of either A- or B-site on the substrate. We further demonstrate that the chemical nature of underlying SrLaAlO 4 substrates is of critical importance in the growth of SrRuO 3 thin films resulting in different morphologies and transport properties. © 2013 American Institute of Physics.

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