摘要
In this paper, a novel 4T-2R self-aligned nitride (SAN) cell-integrated static random-access memory (SRAM) cell is first implemented for true random number generator (TRNG) applications. The SRAM can be latched to either state by the unpredictable random telegraph noise (RTN) on the contact RRAMs (CRRAMs). With a self-convergent trimming mechanism, mismatches in SRAM cells due to process variation can be effectively reduced, enabling the small RTN signal to toggle the states randomly. In addition, the numbers generated by the random toggle in the cross-couple latch can be stored directly. Through a series of standard randomness tests, the feasibility, stability of randomness, unpredictability, and long-run continuity of the full logic compatible SRAM TRNG have been demonstrated, making it a promising solution for data security and identification in advanced CMOS-integrated circuits (ICs).