Self-Induced Ge-Doped HfO2 Applied to Ge Stacked Nanowires Ferroelectric Gate-All-Around Field-Effect Transistor with Steep Subthreshold Slope Under O3 Treatment with GeO2 as Interfacial Layer

Journal article

ECS Journal of Solid State Science and Technology

2024

Abstract

Ge;Ferroelectric;GAAFET

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Title: Self-Induced Ge-Doped HfO2 Applied to Ge Stacked Nanowires Ferroelectric Gate-All-Around Field-Effect Transistor with Steep Subthreshold Slope Under O3 Treatment with GeO2 as Interfacial Layer
Creators - without role: 永俊吳
Publication Details: ECS Journal of Solid State Science and Technology
Identifiers: 9957766787906774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: English
Resource Type: Journal article