Abstract
Endotaxial growth of self-assembled α-Fe Si2 nanowires (NWs) on (100)Si has been achieved by combining reactive deposition epitaxy and nitride-mediated epitaxy. The length and the length/width aspect ratio of metallic α-Fe Si2 NWs could be increased more than 12 and 6 folds to 2 μm, and 200 respectively, with a narrow width of 5-10 nm after prolonged annealing. The adjustment capability is attributed to the diminished flux of Fe adatoms mediated by the Si3 N4 barrier layer to allow more complete shape transition. The scheme represents a degree of control on the morphology of self-assembled epitaxial silicide NWs not achievable otherwise. c 2006 American Institute of Physics.