Abstract
A novel resistive switching structure, tin-doped indium oxide (ITO)/SnO2%x (defined as SnO2 with oxygen vacancies)/SnS was demonstrated with a set voltage of 0.38V, a reset voltage of %0.15V, a ratio of high resistance to low resistance of 544, and forming-free and nonlinear current- voltage (I-V) characteristics. The interface of the ITO and the self-assembled SnO2%x contributed to the resistive switching behavior. This device showed great potential for resistive random access memory (RRAM) application and solving the sneak path problem in cross-bar memory arrays. Furthermore, a nanostructured resistive switching device was demonstrated successfully.