- Title
- Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric gate-all-around field-effect transistor
- Creators - without role
- 永俊 吳
- Identifiers
- 9957769336806774
- Academic Unit
- Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
- Language
- English
- Resource Type
- Journal article
- Publication Details
- Appl. Phys. Lett.
Journal article
Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric gate-all-around field-effect transistor
Appl. Phys. Lett.
2020
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