摘要
Semipolar (11ar 2 ar 2) ZnO was successfully grown on (112) LaAlO 3 /(LaAlO 3 ) 0.29 (Sr 2 AlTaO 6 ) 0.35 substrate by pulsed laser deposition. The epitaxial relationship is [11ar 23]_{m ZnO} // [11ar 1]_{m LAO/LSAT} with the polar axis of [000ar 1]_{m ZnO} pointing to the surface. For ZnO films with thickness of 1.6 μm, the threading dislocation density is ~1 × 10 9 cm -2 , and the density of basal stacking faults is below 1 × 10 4 cm -1 . The (11ar 2 ar 2) ZnO exhibits strong D 0 X emissions with a FWHM of 9 meV and very few green-yellow emissions in the low-temperature (10 K) and room-temperature photoluminescence spectra, respectively. The XRD 2θ -θ pattern of 1.6 μm ZnO films grown on (112) LaAlO 3 /LSAT only reveals a sharp (11ar 2 ar 2) ZnO reflection for ZnO. The inset figure is the XRD rocking curve of (11ar 2 ar 2) ZnO with a FWHM of 0.084°. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.