- 題名
- Sensitivity and limitations of plasma charging damage measurements using MOS capacitors structures
- 創作者：
- Shawming Ma - Stanford SystemX AllianceWael L.N. Abdel-Ati - Stanford SystemX AllianceJames P. McVittie - Stanford University
- 總頁數
- 3
- 補助款備註
- Semiconductor Research Corporation (http://data.elsevier.com/vocabulary/SciValFunders/100000028) Defense Advanced Research Projects Agency (http://data.elsevier.com/vocabulary/SciValFunders/100000185) Advanced Research Projects Agency (http://data.elsevier.com/vocabulary/SciValFunders/100009224)
- 學術資源類型
- 期刊文章
- 出版日期
- 01/09/1997
- 出版資訊
- IEEE electron device letters, 卷.18(9), 頁碼.420-422
- 語言
- 英語
期刊文章
Sensitivity and limitations of plasma charging damage measurements using MOS capacitors structures
IEEE electron device letters, 卷.18(9), 頁碼.420-422
01/09/1997
Web of Science ID: WOS:A1997XR89300006
指標
1 檢視次數