SiGe/Si Superlattice Ferroelectric HfZrO 2 ΩFET and CMOS Inverter with SS min, n= 62.4 mV/dec, I ON/I OFF> 1.0× 10 7, and Voltage Gain= 111.4 V/V

Journal article

IEEE Electron Device Letters

2023

Abstract

Superlattice;Ferroelectric;HZO;CMOS

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Title: SiGe/Si Superlattice Ferroelectric HfZrO 2 ΩFET and CMOS Inverter with SS min, n= 62.4 mV/dec, I ON/I OFF> 1.0× 10 7, and Voltage Gain= 111.4 V/V
Creators - without role: 永俊吳
Publication Details: IEEE Electron Device Letters
Identifiers: 9957773757306774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: English
Resource Type: Journal article