摘要
We investigate the initial oxidation and SiO 2 /6H-SiC interface formation by core Jevel photoemission spectroscopy using synchrotron radiation. The results indicate that the direct oxidation of the 6H-SiC(0001)3×3 surface leads to SiO 2 formation at low temperatures (500 °C) with a nonabrupt interface having significant amounts of mixed (Si-O-C) and intermediate (Si 3+ ,Si 2+ ,Si + ) oxidation products. In contrast, C-free and a much more abrupt SiO 2 /6H-SiC(0001) interface formation is achieved when predeposited Si overlayer is thermally oxidized at low oxygen exposures and low temperatures (500 °C). © 1999 American Institute of Physics.