摘要
Photovoltaic, microelectromechanical systems, and integrated circuit industries are demanding a technology to enable the high rupture resistant silicon wafer production to improve the manufacturing yield. The presented silicon nanotexture patterning on the edges and sidewalls by wet chemical etching process can protect single-crystalline and multicrystalline silicon samples from rupture. Bending tests indicate a mechanical strength enhancement of ∼ 72 %-75% for sc-silicon and ∼ 71 %-73% for mc-silicon samples. In addition, the front and back surfaces of the samples remain intact and appropriate for any further semiconductor processes. This technology was implemented in solar cells that exhibited a strength improvement of nearly 73% without affecting their photovoltaic performances, anticipating an effective solution for the solar cell manufacturing industry. [2014-0234]