Abstract
A simple scheme is proposed to increase the hold voltage and not change the original trigger voltage of a silicon-controlled rectifier (SCR) to enhance its latch-up immunity without changing the device dimensions. It is found that using the lightly doped P-diffusion instead of the highly doped P + diffusion as the P emitter of the anode can increase the hold voltage of an SCR. © 2014 The Institution of Engineering and Technology.