摘要
This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages. The p-IGBT, fabricated on an n-type substrate, offers notable commercial advantages over n-IGBTs on p-type substrates. The n-shield can effectively protect the trench gate oxide in the corners of SiC. The n-shield and n-pillar can be either floating or grounded, with the floating shield condition significantly enhancing injection and improving forward conduction performance. The superjunction floating shield p-IGBT (SJFS-p-IGBT) improves forward conduction voltage (VF) by 47% and 15% compared to conventional planar gate p-IGBT (CP-p-IGBT) and grounded shield p-IGBT (CGS-p-IGBT), respectively. For switching characteristics, the superjunction grounded shield p-IGBT (SJGS-p-IGBT) improves turn-off time (toff) by 15% compared to the conventional floating shield p-IGBT (CFS-p-IGBT). The trade-off between VF and turn-off energy (Eoff) is analyzed, showing that the SJFS-p-IGBT offers a better trade-off. A negative temperature coefficient is observed at high buffer layer doping concentration and elevated temperatures, leading to an increase in VF. This provides design guidance for devices operating in parallel at high temperatures. These results demonstrate the SJ's potential to enhance efficiency and performance for ultra-high voltage applications.