摘要
The mobility enhancement of metal-oxide-semiconductor field-effect transistors (MOSFETs) using narrow gate lengths and channel widths is sensitive to the stress effects of silicon channels related to advanced strain engineering. The layout pattern of MOSFETs significantly influences the device performance, particularly the protruding gate width on shallow trench isolation structures. This paper investigates the geometric construction of an n-channel MOSFET composed of silicon-carbon stressors embedded in source/drain regions. The stressors have a 1.65% carbon mole fraction and a 1.1 GPa tensile contact etch stop layer. Finite element analysis and analysis of variance were used to determine the bending effect of protruding gate widths on the MOSFETs. Results show that the main variation parameters are channel lengths and protruding gate widths, which determine the improvement in device performance. These results can serve as guidelines of stress impacts for predicting the next-generation node technologies of layout patterns.