摘要
Simultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh-vacuum (UHV)-deposited V and Zr thin films on (111) Si by high-resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the V/Si system, an amorphous interlayer (a-interlayer), V 3 Si and V 5 Si 3 , were found to form simultaneously in samples annealed at 500°C for 60 min. For the Zr/Si system, an a-interlayer, Zr 5 Si 3 as well as FeB and CrB types of ZrSi, were observed to form in samples annealed at 440°C for 40 min. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV-deposited refractory metal and rare-earth-metal thin films on silicon. The observation of the prevalence of the formation of multiphases in the initial stages of thin film reactions called for a reexamination of generally accepted "difference" in reaction sequence between bulk and thin-film couples. © 1996 American Institute of Physics.