摘要
We demonstrate a single-chip switch-mode boost converter that features a monolithically integrated lateral field-effect rectifier (L-FER) and a normally off transistor switch. The circuit was fabricated on a standard AlGaN/GaN HEMT epitaxial wafer grown with GaN-on-Si technology. The fabricated rectifier with a drift length of 15 μm exhibits a breakdown voltage of 470 V, a turn-on voltage of 0.58 V, and a specific on-resistance of 2.04 mΩ · cm 2 . The L-FER exhibits no reverse recovery current associated with the turn-off transient because of its unipolar nature. A prototype of GaN-based boost converter that includes monolithically integrated rectifiers and transistors is demonstrated using conventional GaN-on-Si wafers for the first time to prove the feasibility of the GaN-based power IC technology. © 2009 IEEE.