Abstract
The coherent GaN nanocrystals spontaneously formed by nitrogen-plasma- assisted reactive epitaxy with Ga droplets supported on the single crystalline Si 3 N 4 /Si surface were discussed. The distribution of grown GaN nanocrystal was very uniform in size and shape and the distribution width was significantly lower than that of Ga droplets deposited in the Volmer-Weber mode. The cross section of the nanocrystal was trapezoidal and lattice structure was wurtzite-type and defect-free. Analysis shows that the shape and crystalline structure of the self-assembled GaN nanocrystal was truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.