摘要
Temperature dependence of sheet resistance for a generic RuO2-based resistor with a composition of 20wt.% RuO2-80wt.% glass (63wt.% PbO-25wt.% B2O3-12wt.% SiO2) is evaluated. A combined tunnel/parallel conduction model is employed to describe the resistance behavior with respect to the temperature variation. The geometry of the resistive film, such as the aspect ratio and thickness, cast a significant effect on the electrical characteristic of the thick film assembly. It is observed that shorter resistive films exhibit smaller resistivity as compared to that of the longer film. Thinner resistive films have smaller resistivity as compared to the thicker ones. In addition, 1/f noise is the dominating contribution in the thick film resistor. The presence of 1/f noise can be qualitatively explained with the aid of the tunneling mechanism. © 1992 TMS.