Abstract
A simulator using a coupled Schrödinger equation, Poisson equation and Fermi-Dirac statistics to analyze inversion layer quantization is shown to match the measured capacitance versus voltage data of thin oxide gate metal-on-insulator capacitance closely. The effects of bias voltage, oxide thickness and doping concentration on the charge centroid are presented. A simple empirical model for the alternating current charge centroid of the inversion layer is proposed. This model predicts the in-version layer capacitance or charge centroid in terms of T ox (oxide thickness), V t (threshold voltage), and V g (gate voltage) explicitly. © 1998 American Institute of Physics.