摘要
EUV lithography has been widely regarded as the lithography technology to succeed optical lithography since the 100-nm era. With the ending of 193-nm immersion lithography in sight, the need for a successor cannot be more urgent. We deal quantitatively with various critical aspects of EUV lithography such as source and power requirement, mask specification, random phase shifting, oblique incidence, reflective projection optics, and resist, to compile a list of the critical issues and to determine the most critical ones to make the technology a success. © 2006 Society of Photo-Optical Instrumentation Engineers.