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Soldering-Induced Cu Diffusion and Intermetallic Compound Formation between Ni/Cu Under Bump Metallization and SnPb Flip-Chip Solder Bumps
Journal article   Peer reviewed

Soldering-Induced Cu Diffusion and Intermetallic Compound Formation between Ni/Cu Under Bump Metallization and SnPb Flip-Chip Solder Bumps

Chien-Sheng Huang, Guh-Yaw Jang and Jenq-Gong Duh
Journal of Electronic Materials, Vol.33(4), pp.283-289
04/2004

Abstract

Diffusion Flip chip Intermetallic compound Soldering-induced Under bump metallization (UBM)
Nickel-based under bump metallization (UBM) has been widely used as a diffusion barrier to prevent the rapid reaction between the Cu conductor and Sn-based solders. In this study, joints with and without solder after heat treatments were employed to evaluate the diffusion behavior of Cu in the 63Sn-37Pb/Ni/Cu/Ti/Si 3 N 4 /Si multilayer structure. The atomic flux of Cu diffused through Ni was evaluated from the concentration profiles of Cu in solder joints. During reflow, the atomic flux of Cu was on the order of 10 15 -10 16 atoms/cm 2 s. However, in the assembly without solder, no Cu was detected on the surface of Ni even after ten cycles of reflow. The diffusion behavior of Cu during heat treatments was studied, and the soldering-process-induced Cu diffusion through Ni metallization was characterized. In addition, the effect of Cu content in the solder near the solder/intermetallic compound (IMC) interface on interfacial reactions between the solder and the Ni/Cu UBM was also discussed. It is evident that the (Cu,Ni) 6 Sn 5 IMC might form as the concentration of Cu in the Sn-Cu-Ni alloy exceeds 0.6 wt.%.

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