摘要
We theoretically investigate a new type of lateral trap that can be used to confine quantum well excitons. By sending an ultrahigh frequency bulk acoustic wave from the substrate of III-V semiconductors such as GaAs or GaN, an oscillating piezoelectric field is generated. The effective potential induced by the oscillating piezoelectric field implements a type I lateral trap. Such a controllable quantum confinement is essential in many semiconductor nano-electronics and nano-photonics applications. © 2006 Elsevier Ltd. All rights reserved.