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Spin-resolved electron transport in nanoscale heterojunctions. Theory and applications
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Spin-resolved electron transport in nanoscale heterojunctions. Theory and applications

Artur Useinov, Hsiu-Hau Lin, Niazbeck UseinovLenar Tagirov
Journal of Magnetism and Magnetic Materials, 卷.508, 166729
08/2020

摘要

Ballistic magnetoresistance Domain wall resistance Heterojunctions Interconnects Point contact Spin-resolved conductance Spin-resolved contact resistance Spintronics Tunnel magnetoresistance Electronic Optical and Magnetic Materials Condensed Matter Physics
The work represents the extended theoretical model of the electrical conductance in nanoscale magnetic point-like contacts. The developed approach describes diffusive, quasi-ballistic, ballistic and quantum regimes of the spin-resolved conductance that is important for further development of the contact Andreev reflection spectroscopy, heterojunction models, scanning tunnel microscopy techniques. As a benefit, the model provides a unified description of the contact resistance from Maxwell diffusive through the ballistic to purely quantum transport regimes without residual terms. The model of the point contact assumes that the contact area can be replaced by a complicated object (i.e. the tunnel barrier or complicated one with nanoparticles, narrow domain wall, etc.), where the potential energy profile determines its electrical properties. The model can be easily adapted to particular contact materials, its physical properties and species of the contact area.

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https://doi.org/10.1016/j.jmmm.2020.166729檢視
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