摘要
The output power of conventional light-emitting diodes (LEDs) is enhanced by 9% at 120 mA current without alterations to the existing fabrication techniques and to the multi-quantum well (MQW) junction. The output power is improved by nanotexturing the street of the n-gallium nitride (GaN) layer that was unexploited, for the enhancement of the optical or electrical properties. The nanotextured street enhances the light extraction exclusively near the street of the n-GaN layer by reducing the reflections from the LED surface. Similar light output patterns and I-V characteristics for LEDs with and without street nanotexturing were observed, confirming that the enhanced light extraction has been achieved without a change in the spatial distribution of light or in the properties of the MQW junction. A new approach for the output power enhancement of all types of existing LEDs is provided.