摘要
This study reports a mechanical stress-based technique that involves scratching or imprinting to write textured graphite conducting wires/patterns in an insulating amorphous carbon matrix for potential use as interconnects in future carbonaceous circuits. With low-energy post-annealing below the temperature that is required for the thermal graphitization of amorphous carbon, the amorphous carbon phase only in the mechanically stressed regions transforms into a well aligned crystalline graphite structure with a low electrical resistivity of 420 μΩ-cm, while the surrounding amorphous carbon matrix remains insulating. Micro-Raman spectra with obvious graphitic peaks and high-resolution transmission electron microscopic observations of clear graphitic lattice verified the localized phase transformation of amorphous carbon into textured graphite exactly in the stressed regions. The stress-induced reconstruction of carbon bonds to generate oriented graphitic nuclei is believed to assist in the pseudo-self-formation of textured graphite during low-temperature post annealing.