摘要
In this letter, the potential of single crystalline 4H-polytype silicon carbide (4H-SiC) based microelectromechanical structures as resistance thermometer for high temperature sensing were explored. A dopant-selective photoelectrochemical etching process was applied to release the sensing element – suspended microstructures on 4H-SiC substrate. Residual stress and stress gradient in the microstructure before and after release was examined by micro-Raman spectroscopy. Electrical resistance of the suspended microstructures at different temperatures were characterized and analyzed by a temperature-dependent electron mobility model.