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Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization
期刊文章

Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

J.H. Wang, P.T. Liu, T.S. Chang, T.C. Chang 和 L.J. Chen
Thin Solid Films, 卷.469-470(SPEC. ISS.), 頁碼.393-397
12/2004
DOI: https://doi.org/10.1016/j.tsf.2004.09.014

摘要

Copper suicide Dielectric constant Porous polysilazane Electronic Optical and Magnetic Materials Surfaces and Interfaces Surfaces Coatings and Films Metals and Alloys Materials Chemistry
The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO 2 at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature. © 2004 Elsevier B.V. All rights reserved.

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