Abstract
BaTiO 3 films have been deposited onto Pt/Si substrates by repeated spin-coating and heat-treatment of precursors prepared by a sol-gel process using Ti(O-iPr) 4 , Ba(CH 3 COO) 2 , and chelating agent CH 3 COCH 2 COCH 3 . These films exhibit cubic phase structure and possess desired (110) orientation. Representative fragments Ti + , TiO + , Ba + and BaOH + from BaTiO 3 lattices are observed in the positive static SIMS spectrum. A well-defined interface between a BaTiO 3 film and a Pt/Si substrate suggests that the proposed method is capable of depositing BaTiO 3 films onto Pt/Si substrates without Si diffusion from underlying Pt/Si substrates.