摘要
In this study, a Zr-Cu-Ni-Al-N thin film metallic glass (TFMG) has been developed and applied for the diffusion barrier between copper and silicon. The Si/TFMG/Cu stacked structures with various TFMG thickness have been fabricated. Rapid thermal annealing was conducted at 500, 600, 700 and 800 °C. The X-ray diffraction analysis was applied to identify the formation of Cu 3 Si intermetallic compound. The Electron Spectroscopy for Chemical Analysis (ESCA) depth profile was executed to quantitatively evaluate the degree of Cu-Si inter-diffusion. With the aid of HR-TEM, the microstructure of the stack could be observed. It is shown that a 10-nm-thick TFMG thin film barrier is capable of retarding the Cu-Si inter-diffusion under 700 °C. The degree of Cu-Si diffusion is strongly related to the structural evolution of TFMG annealed at various temperature. The thickness of TFMG also exhibits a positive effect on barrier performance. Finally, the correlation between microstructure, thermal properties, thickness and barrier performance of the TFMG will be revealed and established.