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Studies on forming gas annealing treated BiFeO3 thin films and capacitors
Journal article   Peer reviewed

Studies on forming gas annealing treated BiFeO3 thin films and capacitors

Chia-Ching Lee, Lin-Jung Wu and Jenn-Ming Wu
Applied Physics Letters, Vol.91(20), 202902
2007

Abstract

The structure and electric properties of BiFe O3 (BFO) BaPb O3 (BPO) and Pt/BFO/BPO capacitors with forming gas annealing (FGA) treatment were investigated. X-ray diffraction patterns indicated that the annealing did not affect the structure and phase of BFO films. A degraded electric property was obtained in FGA-treated Pt/BFO/BPO films. It can be attributed to the formation of reduction and incomplete reduction of Bi+3 of BFO. Retention and fatigue properties were obtained in FGA-treated BPO/BFO/BPO capacitors. The normalized Pr loss was 22.8% after applying a voltage above 2 Vc (coercive voltage) with 1011 cycles. The retention behavior within 30 000 s is governed by the logarithmic time dependence. © 2007 American Institute of Physics.

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