Abstract
In order to develop functions of a system and/or reduce the sizes and the volumes, increasing surface areas per unit volume of a device, such as a capacitor or a gas sensor, becomes one of the solutions and can enhance the performance. Therefore, the formation of micro-structured holes or micro-trenches is one method to increase the ratio of the surface area to the volume. Film deposition on the surface of micro-structures has been widely and urgently for semiconductor application or microelectromechanical systems (MEMS) processes. Continuity and uniformity are very important characteristics for a thin film on the micro-structures since any discontinuous film would result in poor performance. In the current study, dual ion beams were firstly used to deposit film on the surface of micro-trenches. According to the results, the dual ion beam systemshows good step coverage and uniformity of film on the micro-trench. ©2008 The Japan Society of Applied Physics.