Abstract
Twins in three different III-V compound semiconductors, including GaAs, GaP, and InAs, crystals have been studied by both chemical etching method and transmission electron microscopy. From chemical etching it is concluded that the growth conditions which result in the generation of large irregular facets also favor the formation of twins. However, the facets are not necessarily the nucleation sites of twins. All twins in III-V compound semiconductors are identified by chemical etching method to be 60° rotation twins. c 1992.