Abstract
Polycrystalline silicon films with grain size of 1 μm were successfully deposited on glass substrates using electron cyclotron resonance chemical vapor deposition (ECR-CVD) with hydrogen dilution method at 250°C and without any thermal annealing. The deposited films exhibited special leaf-like grain shape and upside-down cone shape. The severe hill and valley surface roughness, preferred orientation transition and facets structure were explained by the surface reactivity anisotropy induced by the atomic hydrogen and the dominant precursors behavior of SiH 3 and SiH 2 . The grain size of deposited poly-Si films was determined by the hydrogen dilution ratio.