Abstract
The growth of CdTe epitaxial films on both (100) and (111) GaAs was studied in this work. Our results indicate that the growth rate on (111) GaAs is about twice of that on corresponding (100) GaAs substrates under the same growth conditions. These results, as well as those from the study of the effect of input molar ratios of organometallic compounds, can be fitted reasonably well by our previous model. The kinetic rate constant derived from these data has an activation energy of 70 kcal/mole, whose order of magnitude is consistent with our assumption that thè decomposition of diethyltelluride (DETe) molecules is the rate-limiting step in this MOCVD process. In addition to growth rates, we also find significant difference in morphologies for (100) and (111) surfaces, which exhibit pyramids on (100) surface and are very often smooth and featureless on a (111) CdTe surfaces. © 1990 Taylor & Francis Group, LLC.