Abstract
In this work, we present the electrical properties of metal/p + porous silicon (PS)/p + c-Si/Au cells with the PS layers prepared by different anodization conditions. It is shown that the anodization parameters affect the geometrical interconnections of these PS samples and the corresponding electrical properties are different from one another. Different conduction characteristics, namely the Ohm's law, Schottky rectification, Pool-Frenkel type conduction, injection power law, and possibly hopping transport have been observed in the samples with certain treatments. It is suggested that the transport property of p + PS is a competition among interfaces, Si interconnected channels, and surface channels.