Abstract
We utilized the conventional planar fabrication technique and the electrochemical etching method to prepare porous Si layers in the p-type region of a p-n junction, which makes the study on the transverse transport property of this material possible. The junctions were fabricated by low energy ion implantation, with porous Si formed perpendicular to the junction and between two metal contacts. This structure confines currents to the direction parallel to the surface. Distinct photoconductivity and photovoltaic effects have been clearly revealed from the I-V curves.