摘要
The optical properties of single InGaN/GaN heterostructure nanowires (NWs) with a mean diameter down to 18 nm are investigated. Sharp emission lines originating from the recombination of localized excitons in the InGaN disk layer can be resolved. Excitation-dependent energy shifts, together with spectral diffusions of these emission lines, indicate the presence of a weak quantum confined Stark effect (QCSE) caused by nearby charge fluctuations, rather than the screening of piezoelectric polarizations at the InGaN/GaN interface. The absence of a piezoelectric polarization field is further confirmed by time-resolved photoluminescence measurements. Numerical simulations reveal that the elastic strain relaxation via the NW geometry is marginal and occurs only near the NW sidewalls. Carrier localization preferentially near the periphery of the InGaN disk and alloy intermixing are suggested as possible reasons for the absence of a polarization-induced QCSE in thin InGaN/GaN heterostructure NWs. © 2013 American Physical Society.