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Suppression of the Boron Penetration Induced Si/SiO2 Interface Degradation by Using a Stacked-Amorphous-Silicon Film as the Gate Structure for pMOSFET
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Suppression of the Boron Penetration Induced Si/SiO2 Interface Degradation by Using a Stacked-Amorphous-Silicon Film as the Gate Structure for pMOSFET

Shye Lin Wu, Chung Len Lee, Tan Fu Lei, J.F. Chen and L.J. Chen
IEEE Electron Device Letters, Vol.15(5), pp.160-162
1994
DOI: https://doi.org/10.1109/55.291600

Abstract

Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
This letter reports that the boron penetration through the thin gate oxide into the Si substrate does not only cause a large threshold voltage shift but also induces a large degradation in the Si/SiO2 interface. An atomically flat Si/SiO2 interface can be easily obtained by using a stacked-amorphous-silicon (SAS) film as the gate structure for p+poly-Si gate MOS devices even the annealing temperature is as high as 1000° C. © 1994 IEEE

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