Abstract
The interaction between chemisorbed oxygen adatoms (O 2(ad) - ) and oxygen vacancies associated with the formation/rupture of conductive filaments dominates the switching yield of ZnO, which is also confirmed by the fact that the reduction of SET/RESET voltage with the temperature. The pronounced surface effect-induced conductivity lowering due to O 2(ad) - chemisorption leads to increased resistance of high resistance state (HRS). The current decay of the HRS with increased temperatures/times is owing to the severe O 2(ad) - chemisorption as Joule heating is continuously applied. The statistical analysis for over 400 cells provides essential evidence for evaluating the surface effect on resistive switching. © 2011 American Institute of Physics.