Surface modification of nanotwinned copper and SiCN using N2 and Ar plasma activation

R.-J. Lee; P.-S. He; D.-P. Tran; W.-L. Chiu; H.-H. Chang; C.-C. Lee; C. Chen

doi:10.1016/j.apsusc.2024.161832

期刊文章

Surface modification of nanotwinned copper and SiCN using N2 and Ar plasma activation

R.-J. Lee, P.-S. He, D.-P. Tran, W.-L. Chiu, H.-H. Chang, C.-C. Lee 和 C. Chen

Applied Surface Science, 卷.684

2025

DOI: https://doi.org/10.1016/j.apsusc.2024.161832

Web of Science ID: WOS:001361687400001

摘要

3D IC

Nanotwinned Cu

Plasma treatment

Room temperature bonding

SiCN

Bending tests

Carbon nitride

Copper

Copper alloys

Gluing

High resolution transmission electron microscopy

Plasma applications

Silicon nitride

3-D ICs

Ar plasmas

Bonding energies

Bonding strength

Nanotwinned

Nanotwinned copper

Nanotwinned cu

Plasma treatment

Room temperature bonding

Silicon carbon nitride

X ray photoelectron spectroscopy

Nanotwinned copper (NT-Cu) and silicon carbon nitride (SiCN) films were modified using N2/Ar plasmas to enhance their bonding strength. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle analyses were then conducted. The contact angles of the NT-Cu films significantly reduced, dropping from 54.8° to 32.1°, while that of the SiCN sharply declined from 51.1° to under 10°. A significant increase in the Si-O bonds was found in the SiCN after the plasma treatment. These factors thus contributed to the enhanced bonding strength (up to 30 and 27.4 MPa for the NT-Cu/NT-Cu and SiCN/SiCN, respectively). Additionally, we performed the SiCN/SiCN room temperature bonding and evaluated its bonding energy using four-point bending tests. We found that the bonding energy increased from 0.49 to 1.2 J/m2 after annealing at 100 °C for 30 min. Transmission electron microscopy (TEM) image revealed some nanovoids at the bonding interface as bonded at room temperature. These voids could be eliminated by further annealing at 250 °C for 1 h. This study offers insights into the plasma surface modification to enhance the bonding strength of NT-Cu/NT-Cu and SiCN/SiCN. © 2024

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題名: Surface modification of nanotwinned copper and SiCN using N2 and Ar plasma activation
創作者：: R.-J. Lee - National Yang Ming Chiao Tung University
P.-S. He - National Yang Ming Chiao Tung University
D.-P. Tran - National Yang Ming Chiao Tung University
W.-L. Chiu - Industrial Technology Research Institute
H.-H. Chang - Industrial Technology Research Institute
C.-C. Lee - National Tsing Hua University
C. Chen - National Yang Ming Chiao Tung University
出版者: Elsevier B.V.; AMSTERDAM
總頁數: 15
補助款備註: National Science and Technology Council, Taiwan: NSTC 113-2634-F-A49-008 Wafer Level System Integration Process Department at the Industrial Technology Research Institute, Hsinchu, Taiwan
This work was financially supported by the National Science and Technology Council, Taiwan, through the T-Star Center project "Future Semiconductor Technology Research Center", under Grant No. NSTC 113-2634-F-A49-008. Additionally, the authors would like to thank the Wafer Level System Integration Process Department at the Industrial Technology Research Institute, Hsinchu, Taiwan for their assistance and support.
學術資源類型: 期刊文章
出版日期: 2025
出版資訊: Applied Surface Science, 卷.684
語言: 英語

Surface modification of nanotwinned copper and SiCN using N2 and Ar plasma activation

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