Abstract
The temporal variation of the surface morphology of Ta 2 O 5 films on Si substrates has been measured using X-ray reflectivity at a fixed angle during radio-frequency magnetron sputtering. During an early stage of growth of polycrystalline Ta 2 O 5 , the variation of surface roughness revealed a morphology of island nucleation and island coalescence. For a thickness greater than 7 nm, the surface roughness increased, to more than 2 nm at a thickness of 80 nm. For crystalline Ta 2 O 5 films, the density of sputtered Ta 2 O 5 films increased and attained the bulk value for a film only at a thickness greater than 80 nm. For an amorphous sputtered film, the surface was less rough and the density was less than that for a crystalline film. © International Union of Crystallography 2008.