摘要
The present study employed the surfactant-free growth of ultralong (∼50 μm) silver nanowires (AgNWs) with a high aspect ratio (more than 1000) by galvanic replacement. AgNW conducting films were fabricated as electrodes using drop-casting. The AgNW film had 90% transmittance to 550 nm light with a sheet resistance of 232 Ω sq -1 . Further, the flexibility test of the transparent flexible AgNW/MoS 2 device array indicated that the variation of the current was within 5% when a strain of 0.5% was applied to the device; additionally, the device showed a 13% decrease in current after experiencing 50 000 bending cycles. This study indicated that the ultralong AgNWs synthesized using galvanic replacement have potential for applications as transparent and flexible electrodes.